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  4. Investigation of various surface passivation layers using oxide/nitride stacks of silicon solar cells
 
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2003
Conference Paper
Title

Investigation of various surface passivation layers using oxide/nitride stacks of silicon solar cells

Abstract
In this work, three different surface passivation technologies are used: classical thermal oxidation (CTO), rapid thermal oxidation (RTO) and silicon nitride using PECVD. Eight combined passivation schemes including SiO 2/SiNx stacks are investigated on 1 ohm cm FZ silicon without and with emitter (100 ohm/ and 40 ohm /). SiO2/SiNx stack passivation results in excellent lifetime of 1361 µs without emitter and shows as a good passivation quality as CTO (300-400 µs) for 100 ohm/ emitter. The RTO/SiNx stack layers are used to passivate front and rear surfaces of the solar cells. The planar RTO/SiNx cell has a very high V(ind oc) of 675.6 mV. However, the Jsc and FF of the RTO/SiNx cells are lower than those of CTO cells. The main reasons of J(ind sc) and FF losses are also discussed.
Author(s)
Lee, J.Y.
Dicker, Jochen
Rein, Stefan  
Glunz, Stefan W.  
Mainwork
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B  
Conference
World Conference on Photovoltaic Energy Conversion (WCPEC) 2003  
PV Science and Engineering Conference 2003  
PV Specialists Conference 2003  
European PV Solar Energy Conference 2003  
File(s)
Download (267.12 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-341997
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
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