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  4. High-speed directly and indirectly modulated VCSELs
 
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2008
Conference Paper
Title

High-speed directly and indirectly modulated VCSELs

Abstract
Recent results on directly modulated VCSELs, including high efficiency 980 nm devices operating error free at 20 Gbit/s without current adjustment between 25 and 85°C, will be reviewed. In addition, a novel electro-optically modulated (EOM) VCSEL concept employing an EOM Bragg reflector based on the Quantum Confined Stark Effect will be proposed and preliminary data presented.
Author(s)
Hopfer, F.
Mutig, A.
Strittmatter, A.
Fiol, G.
Moser, P.
Bimberg, D.
Shchukina, V.A.
Ledentsova, N.N.
Lott, J.A.
Quast, H.
Kuntz, M.
Mikhrin, S.S.
Krestnikov, I.L.
Livshits, D.A.
Kovsh, A.R.
Bornholdt, C.
Mainwork
20th International Conference on Indium Phosphide and Related Materials, IPRM 2008  
Conference
International Conference on Indium Phosphide and Related Materials (IPRM) 2008  
DOI
10.1109/ICIPRM.2008.4703064
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
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