Raman spectroscopy of delta-doped GaAs layers and wires.

Raman spectroscopy is used to study the incorporation of Si in Delta-doped GaAs layers via light scattering by local vibrational modes. This includes the analysis of Si monolayers embedded in GaAs. Raman scattering by excitations of the two- dimensional electron gas in Delta-doped GaAs gives information on the subbands formed by the space charge induced potential well. In addition the effect of additional lateral confinement on these subbands can be studied.