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  4. The role of Ti/Al ratio in nanolayered ohmic contacts for GaN/AlGaN HEMTs
 
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2008
Conference Paper
Titel

The role of Ti/Al ratio in nanolayered ohmic contacts for GaN/AlGaN HEMTs

Abstract
The role of the former-Ti/Al ratio in the nanolayered ohmic contacts to GaN/AlGaN HEMT structures has been studied for three ratios: (30/70) wt.%, (50/50) wt.% and (70/30) wt.%. The dependence of the electrical properties and surface morphology on the initial contact composition and annealing conditions has been investigated. Lowest contact resistivity of 4.22x10(-5) OMEGA.cm( 2) has been achieved for Ti/Al (30/70 wt.%) and Ti/Al (50/50 wt.%) contacts to semi-insulating GaN/AlGaN heterostructures. Smoothest contact surface and most narrow contact periphery have been obtained with a Ti/Al (70/30 wt.%) contact indicating that increase of the Ti/Al ratio improves the contact morphology. The contact composition with former-Ti/Al ratio of (50/50) wt.% has been found to fulfill the best both requirements for low resistivity and a smooth surface of the contact.
Author(s)
Kolaklieva, L.
Kakanakov, R.
Cimalla, Volker
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Maroldt, S.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Niebelschütz, F.
Tonisch, K.
Ambacher, Oliver
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Hauptwerk
26th International Conference on Microelectronics 2008. Proceedings. Vol.1
Konferenz
International Conference on Microelectronics (MIEL) 2008
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DOI
10.1109/ICMEL.2008.4559263
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
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