Scatter analysis of optical components from 193 nm to 13.5 nm
Light scattering techniques allow a comprehensive characterization of surfaces and thin film coatings. Driven by the increasing demands on optical components for DUV lithography at 193 nm, a system for ARS and TS measurements at 193 nm and 157 nm has been developed at the Fraunhofer Institute in Jena. The set-up and measurement examples are presented ranging from ARS of low-scattering substrates and dielectric multilayers to the roughness analysis of EUV mirrors. To follow the recent developments of semiconductor industry towards EUV lithography at 13.5 nm, a new EUV scattering measurement system is developed. The current status is reported.