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  4. Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes
 
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1995
Conference Paper
Title

Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes

Other Title
Rekordwerte der Kleinsignalmodulationsbandbreite bis 40 GHz und niedrige Chirp-Faktoren (alpha = 1.4) in Laserdioden mit verspannten In0.35Ga0.65As/GaAs MQW und kurzen Resonatoren
Abstract
We demonstrate, for the first time, direct modulation bandwidths exceeding 40 GHz in short-cavity In0.35Ga0.65As/GaAs multiple-quantum-well laser diodes. Low linewidth enhancement factors (a = 1.4) have been extracted, indicating reduced laser chirp under high-speed direct modulation.
Author(s)
Schönfelder, A.
Weisser, S.
Larkins, E.C.
Benz, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Daleiden, J.
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Maier, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ralston, J.D.
Czotscher, K.
Rosenzweig, Josef  
Mainwork
Semiconductor lasers. Advanced devices and applications. Summaries of papers presented at the topical meeting  
Conference
Topical Meeting on Semiconductor Lasers 1995  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • chirp

  • InGaAs

  • laser diode

  • Laserdiode

  • modulation bandwidth

  • Modulationsbandbreite

  • strained MQW

  • verspannte MQW

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