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2007
Conference Paper
Title
Resonant in-well pumping of GaSb-based VECSELs emitting in the 2.X µm wavelength regime
Abstract
We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35 mu m optimized for resonant optical in-well pumping around 1.95 mu m. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.
Author(s)