2007
Conference Paper
Title

Resonant in-well pumping of GaSb-based VECSELs emitting in the 2.X µm wavelength regime

Abstract
We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35 mu m optimized for resonant optical in-well pumping around 1.95 mu m. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.
Author(s)
Schulz, N.
Rattunde, Marcel  
Manz, Christian  
Köhler, Klaus  
Wagner, J.
Hopkins, J.-M.
Burns, D.
Mainwork
Conference
DOI
Language
English