Simulation of Gallium-Arsenide based high electron mobility transistors

We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between l(g) = 140 nm and l(g) = 300 nm is carried out. Several aspects, including thermal and breakdown effects, the insulator- semiconductor interface, and the Schottky contact are considered.