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  4. Traveling wave electrodes for 50 GHz operation of opto-electronic devices based on InP
 
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1999
Conference Paper
Title

Traveling wave electrodes for 50 GHz operation of opto-electronic devices based on InP

Abstract
We report on the design, fabrication and performance electro-optic switches based on a Mach-Zehnder interferometer with traveling wave electrodes. Our work aimed at increasing the bandwidth of such devices by reducing the loss parameter a of the electrodes. We realized an electrode configuration using electro-plated metallization layers and achieved a bandwidth of 50 GHz (6.4 dB electrical corresponding to 3 dB optical) suitable for the operation of optoelectronic devices up to 100 Gb/s.
Author(s)
Mori, L.
Hoffmann, D.
Bornholdt, C.
Mekonnen, G.G.
Reier, F.
Mainwork
IPRM 1999, Eleventh International Conference on Indium Phosphide and Related Materials. Conference proceedings  
Conference
International Conference on Indium Phosphide and Related Materials (IPRM) 1999  
DOI
10.1109/ICIPRM.1999.773714
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • electro-optical switches

  • electrodes

  • electroplated coatings

  • iii-v semiconductors

  • indium compounds

  • mach-zehnder interferometers

  • semiconductor device metallisation

  • traveling wave electrode

  • optoelectronic device

  • electro-optic switch

  • mach-zehnder interferometer

  • loss parameter

  • electroplated metallization

  • bandwidth

  • 50 GHz

  • 100 Gbit/s

  • inp

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