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1997
Conference Paper
Title

70 GHz long-wavelength photodetector

Abstract
A photodetector for an optical TDM network comprising a GaInAs photoabsorbing layer p-i-n photodiode, an optical waveguide and an electrical biasing network is presented. The detector, operating at 1.55 mu m, reveals a responsivity and bandwidth of 0.37 A/W and 70 GHz, respectively.
Author(s)
Unterborsch, G.
Umbach, A.
Trommer, D.
Mekonnen, G.G.
Mainwork
IOOC-ECOC 97, 11th International Conference on Integrated Optics and Optical Fibre Communications, 23rd European Conference on Optical Communications. Vol.2  
Conference
International Conference on Integrated Optics and Optical Fibre Communications (IOOC) 1997  
European Conference on Optical Communication (ECOC) 1997  
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • gallium arsenide

  • iii-v semiconductors

  • indium compounds

  • infrared detectors

  • integrated optics

  • integrated optoelectronics

  • optical communication equipment

  • optical fibre networks

  • optical waveguides

  • p-i-n photodiodes

  • photodetectors

  • time division multiplexing

  • GHz long-wavelength photodetector

  • photodetector

  • optical tdm network

  • GaInAs photoabsorbing layer p-i-n photodiode

  • optical waveguide

  • electrical biasing network

  • responsivity

  • 70 GHz

  • 1.55 mum

  • GaInAs

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