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  4. High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm
 
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2008
Journal Article
Title

High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm

Abstract
We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 ?m. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 ?m. The beam propagation parameter (M2) was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.
Author(s)
Hopkins, J.-M.
Hempler, N.
Rösener, B.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schulz, N.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rattunde, Marcel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Manz, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Burns, D.
Journal
Optics Letters  
DOI
10.1364/OL.33.000201
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • semiconductor disc laser

  • Halbleiterscheibenlaser

  • infrared laser

  • Infrarot-Laser

  • GaSb

  • tunable laser

  • durchstimmbarer Laser

  • vertical-external-cavity surface-emitting laser

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