2000
Conference Paper
Title

Optimizing Fe-doped semi-insulating optical waveguide layers: Detection of interface layer conduction

Abstract
MOVPE-grown Fe-doped semi-insulating GaInAsP/InP optical waveguide layer stacks are characterized by admittance spectroscopy. A new analysis is presented, based on frequency-resolved circular current distribution calculation, which investigates residual buried interface sheet conductivity as well as bulk properties of the layer stack.
Author(s)
Bach, H.-G.
Ebert, W.
Umbach, A.
Schramm, C.
Hubsch, R.
Seeger, A.
Mainwork
Conference
Language
English
Keyword(s)