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  4. Speed considerations for LDPD based Time-of-Flight CMOS 3D image sensors
 
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2013
Conference Paper
Title

Speed considerations for LDPD based Time-of-Flight CMOS 3D image sensors

Abstract
Recently a 128x96 pixel range imager with a pitch of 40 µm and a fill factor of 38 % was presented for 3D range imaging measurements based on the pulse modulated (PM) time-of-flight (ToF) principle. This sensor employs a highspeed photodetector called lateral drift-field photodiode (LDPD). During the characterization insufficiencies in charge transfer were observed for low-light illumination. Here, characterization and analysis of the former imager is given and a redesign that circumvents the parasitic effects is demonstrated and verified by measurements on chip and on camera level.
Author(s)
Süss, Andreas
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Nitta, Christian  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Spickermann, Andreas
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Durini, Daniel
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Varga, Gabor
RWTH Aachen
Jung, Melanie  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Brockherde, Werner  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Hosticka, Bedrich J.
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Vogt, Holger
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Schwope, Stefan
TriDiCam
Mainwork
ESSCIRC 2013, 39th European Solid‐State Circuits Conference. Proceedings  
Conference
European Solid-State Circuits Conference (ESSCIRC) 2013  
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • Time-of-Flight (ToF)

  • LDPD

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