Experimentelle Modellierung von ultraschnellen MSM-Photodioden mit hoher Modellparameter-Extraktionsschärfe

We report on the nonlinear characteristics of ultrafast MSM photodiodes. Based on physical considerations, a small signal equivalent circuit model topology is defined. The model elements are derived from two-dimensional multiple bias reflection coefficient measurements in a frequency range from 50 MHz up to 25.05 GHz using an extraction algorithm originally developed and well-proved for microwave FETs. Severe nonlinearities have been observed with increased illumination of the interdigital device structure.