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  4. Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers
 
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2009
Conference Paper
Title

Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers

Other Title
Neuere Entwicklungen bei kurzwelligen MIR-Halbleiterscheibenlasern mit hoher Ausgangsleistung
Abstract
Many applications exist for high performance lasers in the short-wave, mid-infrared spectral regime between 1.9 and 2.5µm - from long-range communications systems through to remote atmospheric gas sensing and pollution monitoring. However, a simple, efficient laser source offering the desired performance characteristics and flexibility has not been available. In the last few years considerable progress has been made in the development of optically-pumped (AlGaIn)(AsSb) quantum well semiconductor disk lasers emitting in the 2.Xµm mid-infrared spectral region - continuous-wave and pulsed-pumped output power levels now exceed 6W and 16W respectively. Furthermore, singlefrequency operation with linewidths <4MHz and broad tunability of up to 170nm have also been demonstrated, all at near-diffraction-limited beam quality. Such performance metrics are only possible through the very best materials growth, a sound understanding of the design principles of these highly multi-layered devices and, importantly, the application of effective thermal management.
Author(s)
Burns, D.
Hopkins, J.-M.
Kemp, A.J.
Rösener, B.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schulz, N.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Manz, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rattunde, Marcel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Solid State Lasers XVIII. Technology and devices  
Conference
Conference "Solid State Lasers - Technology and Devices" 2009  
DOI
10.1117/12.811977
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Halbleiterscheibenlaser

  • VECSEL

  • GaSb

  • mittleres Infrarot

  • hohe Brillianz

  • semiconductor disc laser

  • mid infrared

  • high brightness

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