A novel reconfigurable RF switch based on ferroelectric hafnium oxide FeFET fabricated in 22 nm FDSOI technology

This paper presents a novel type of ferroelectric field effect transistor (FeFET)-based RF switch with multiple finger structure fabricated in 22 ~nm FDSOI technology. The ability to adjust the threshold voltage non-volatile allows for a novel switch concept. The FeFET can operate at V_GS=\mathbf0, which reduces the necessity of bias-Tee configurations in the signal path. It combines the advantages of passive and active RF switches with low loss and low distortion. The devices were implemented in the common-source configuration and demonstrate a large memory window exceeding 2 ~V, as well as exceptional performance at mmWave frequencies. We determined a transit frequency \left(f_T\right) and maximum oscillation frequency (f_MAX) of 135GHz and 139GHz, respectively for a device with 16 fingers, 20 ~nm gate length, and 1 \mu m gate width.