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  4. Emitter-base electron transport in GaInP/GaAs heterojunction bipolar transistors and tunnel emitter bipolar transistors.
 
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1991
Conference Paper
Title

Emitter-base electron transport in GaInP/GaAs heterojunction bipolar transistors and tunnel emitter bipolar transistors.

Other Title
Emitter-Basis-Elektronen-Transport in GaInP/GaAs Heterobipolartransistoren und Tunnel-Emitter-Bipolartransistoren
Author(s)
Bachem, K.H.
Pletschen, Wilfried  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Lauterbach, T.
Shur, M.
Mainwork
International Symposium "Semiconductor Device Research Symposium"  
Conference
Semiconductor Device Research Symposium 1991  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • activation energy

  • Aktivierungsenergie

  • collector current

  • Gleichstromkennlinie

  • HBT

  • heterojunction bipolar transistor

  • I-V-characteristic

  • Kollektorstrom

  • TEBT

  • tunnel emitter bipolar transistor

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