Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied Voc = 725 mV) and boron-doped passivated contacts (iVoc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts.