Fundamental studies on the curing behavoir of porous CVD and spin-on dielectrics

The network- and pore-properties in porous CVD and spin-on organosilicate glasses (OSG) were investigated by Fourier transform infrared (FTIR) and positron annihilation lifetime spectroscopy (PALS). Thermal treatments were carried out from room temperature up to 450 °C to observe the porogen degradation by forming a porous network. For spin-on dielectrics a complete porogen removal was achieved at 450 °C creating a mean pore diameter of 3.1 nm, whereas a onset of pore inter-connectivity was precisely estimated at around 400 °C.