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  4. Broadly tunable hetero-cascading quantum cascade lasers
 
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2019
Journal Article
Title

Broadly tunable hetero-cascading quantum cascade lasers

Title Supplement
Design, growth, and external cavity operation
Abstract
Design and growth characteristics of broadly tunable hetero-cascading quantum cascade lasers are discussed. We show the influence of electric field variation, and interface roughness on the gain spectra. Interface roughness is shown to play an important role for these broadband lasers. External cavity configuration has been used to extract narrow-band emission, thus rendering wide tuning range of the device. We achieve a single-chip tuning range of 400 cm−1 (from 1030 cm−1 to 1430 cm−1, namely 7.0-9.7 µm in wavelength) by using tri-stack active regions.
Author(s)
Yang, Quankui
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hugger, Stefan  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Aidam, Rolf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Driad, Rachid  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schilling, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Heussen, Henning
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kirste, Lutz  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ostendorf, Ralf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Journal of Crystal Growth  
DOI
10.1016/j.jcrysgro.2019.02.038
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • lasers

  • infrared device

  • molecular beam epitaxy

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