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Ferroelectricity in Si-doped HfO2 revealed: A binary lead-free ferroelectric
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2014
Journal Article
Title
Ferroelectricity in Si-doped HfO2 revealed: A binary lead-free ferroelectric
Author(s)
Martin, D.
Müller, J.
Schenk, T.
Arruda, T.M.
Kumar, A.
Strelcov, E.
Yurchuk, E.
Müller, S.
Pohl, D.
Schröder, U.
Kalinin, S.V.
Mikolajick, T.
Journal
Advanced Materials
DOI
10.1002/adma.201403115
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS