Low-Frequency Noise Sources and Back-Gate Coupling Effects in FDX-SOI Device

In this paper, the low-frequency noise (LFN) influence in ultrathin body-based 22nm fully depleted silicon-on-insulator (FDSOI) MOSFETs is investigated. Further, possible back-gate biasing effects on the noise amplitude are explored. Measurements on NMOS and PMOS devices are carried out under similar conditions. The front-gate and back-gate LFN do not have very much difference as per the drain current power spectral density results. Furthermore, the different implants show their own noise behavior. It is also observed that a high-k material-based front gate shows a higher influence by LFN than the back gate. At selected biasing conditions, the back gate shows more LFN than the front gate.