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  4. Mid-infrared semiconductor lasers for power projection and sensing
 
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2010
Conference Paper
Title

Mid-infrared semiconductor lasers for power projection and sensing

Abstract
The recent break-through in semiconductor laser-module technology in the infrared region between 2 µm and 10 µm opens up new windows of opportunity for active sensing, imaging, and modulated power projection. Optically pumped semiconductor disk lasers and quantum cascade lasers cover the infrared spectral range continuously, either with tuneable small bandwidths for active spectral sensing or with broad bandwidth, high power (Watt level), and good diffraction properties (M2<2) for modulated power projection and (3D) imaging. This paper reviews the physics of infrared semiconductor disk lasers and quantum cascade lasers, explains the challenges of the module technology (the next higher integration level after chip technology) and outlines several security and defence related issues for future applications.
Author(s)
Tholl, H.D.
Wagner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rattunde, Marcel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hugger, Stefan  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Fuchs, F.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Technologies for Optical Countermeasures VII  
Conference
Conference "Technologies for Optical Countermeasures" 2010  
DOI
10.1117/12.869850
Language
German
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • infrared laser

  • optically pumped semiconductor disk laser

  • quantum cascade laser

  • DIRCM

  • sensing

  • spectral imaging

  • active imaging

  • spectral beam combining

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