Quality and applications of In(Ga)AlAs-layers

In the last few years the InGaAlAs material system has received increasing interest for application in integrated optoelectronic devices. The authors present an analysis of layer and surface quality of MBE-grown InAlAs material, a systematic improvement of Schottky contacts characterized by electrical measurements and finally, the fabrication of MeSFET (Metal Semiconductor Field Effect Transistors), DHBT (Double Heterostructure Bipolar Transistors) and rib waveguide devices.