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1997
Conference Paper
Title

Smart power with 1200V DMOS

Abstract
This paper describes a Smart-Power-Process which integrates a vertical 1200V DMOS power transistor and low voltage CMOS circuits. For isolation purpose between the CMOS part and the high voltage power device the local SIMOX-process is used (separation by implanted oxygen) with a pn junction in series. For the first time a scalable vertical 1200V high power switching device has been combined with VLSI compatible CMOS to realize a resonant power supply circuit for compact fluoresant lamps. The functionallity of the introduced process has been demonstrated by a monolithic integrated five terminal device for compact fluorescent lamps.
Author(s)
Vogt, F.P.
Vogt, H.
Radecker, M.
Fiedler, H.-L.
Mainwork
9th International Symposium on Power Semiconductor Devices and ICs 1997. Proceedings  
Conference
International Symposium on Power Semiconductor Devices and IC's 1997  
DOI
10.1109/ISPSD.1997.601504
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • CMOS-Technik

  • Leistungselektronik

  • Leistungshalbleiterbauelement

  • Leistungsschalter

  • Leistungstransistor

  • SIMOX

  • Smart-Power

  • SOI

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