A CMOS image sensor with combined analog nonvolatile storage capability

A light-sensitive pmos-transistor in a floating n-well and combined with an analoge EEPROM has been fabricated as a single element in a standard 1.5 mu m single-poly CMOS/EEPROM technology. It provides nonvolatile weighted analog image storage and can be programmed in parallel, if implemented as an array. As an example, an image sensor with a nonvolatile analog programmable offset and sensitive adjustment has been realised.