1999
Conference Paper
Title

An SOI 0.6mV offset temperature-compensated hall sensor readout IC for automotive applications up to 200 deg C

Abstract
A high-temperature SIMOX technology using tungsten metallization has been employed for fabrication of a 1.7 mm2 low-offset temperature compensated Hall-readout IC. The chip is suitable for automotive applications up to 200 deg C. The automatic offset cancellation scheme allows for time continuous operation with 0.6mV offset.
Author(s)
Kordas, N.
Derksen, S.
Fiedler, H.-L.
Schmidt, M.
Yasujima, A.
Matsui, M.
Nagano, S.
Ishibashi, K.
Mainwork
Conference
DOI
Language
English
Keyword(s)