AgeMOS2 BTI model for aging simulations in advanced nodes

The Cadence AgeMOS2 BTI model is an advanced solution to model BTI aging at integrated FETs. The model features both degradation and recovery with contributors acting on different time scales. In this presentation, the model itself will be introduced and parametrized based on single-device measurements in an advanced semiconductor technology. As a result, for this technology, aging simulations predict the impact of BTI aging onto circuit performance.