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  4. InP-based 1.55 µm waveguide-integrated photodetectors for high-speed applications
 
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2006
Conference Paper
Title

InP-based 1.55 µm waveguide-integrated photodetectors for high-speed applications

Abstract
The paper reviews key characteristics of ultra fast evanescently coupled waveguide-integrated p-i-n photodetectors for 1.55µm wavelength. In detail, a highly efficient 100 GHz photodetector module and a low-capacitance miniaturized photodiode with 120 GHz bandwidth employing an optical matching layer for enhanced responsivity are reported. Furthermore, recent results on monolithically integrated traveling wave photodetectors based on discrete miniaturized photodiodes with parallel optical feed are presented.
Author(s)
Beling, A.
Mainwork
Integrated optics: devices, materials, and technologies X  
Conference
Conference "Integrated Optics - Devices, Materials, and Technologies" 2006  
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • high-speed optical techniques

  • III-V semiconductor

  • indium compound

  • integrated optoelectronics

  • monolithic integrated circuits

  • optical waveguide

  • photodetector

  • p-i-n photodiode

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