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  4. Low undercut Ti Etch chemistry for Cu bump pillar under bump metallization Wet Etch process
 
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2016
Conference Paper
Title

Low undercut Ti Etch chemistry for Cu bump pillar under bump metallization Wet Etch process

Abstract
This paper demonstrates how a low undercut Ti etchant developed by Technic France can be successfully introduced in a high volume manufacturing Fab for etching the under bump metallization (UBM). The Ti etchant has been tested on 300mm wafer production equipment in GLOBALFOUNDRIES. The Ti etchant evaluation has been carried out in collaboration with the Fraunhofer IZM-ASSID institute.
Author(s)
Capecchi, S.
Atanasova, T.
Willeke, R.
Parthenopoulos, M.
Pizzetti, C.
Daviot, J.
Mainwork
Ultra clean processing of semiconductor surfaces XIII  
Conference
International Symposium on Ultra Clean Processing of Semiconductor Surfaces 2016  
Open Access
DOI
10.4028/www.scientific.net/SSP.255.291
Additional link
Full text
Language
English
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM  
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