Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

We investigated the light-induced degradation of compensated Czochralski grown n-type silicon and found a fast-forming and a slow-forming component similar to p-type silicon. A study by means of extended lifetime spectroscopy shows that the "slow" defect introduces two recombination-active energy levels in the silicon band gap. One level resembles the literature data from p-type silicon of a donor-like level at Et1 = ECB - (0.41 ± 0.02 eV). The second level is found at Et2 = EVB + (0.26 ± 0.02 eV) and exhibits a strong acceptor-like capture asymmetry. The two-level parameterization constitutes a unified model for the description of the injection dependent lifetime on both p- and n-type silicon and is physically more plausible than previous ones featuring multiple independent centers. A comparison to literature data demonstrates the improved description quality achieved with the new parameterization.