Defect transformation in intentionally contaminated FZ silicon during low temperature annealing

Silicon samples intentionally contaminated with iron during growth were investigated in the as-grown state and after a prolonged low temperature anneal at around 300°C with different characterisation techniques, i.e. Deep Level Transient Spectroscopy (DLTS), Temperature Dependent Lifetime Spectroscopy (TLDS) and Photoluminescence (PL) spectroscopy. A defect transformation was found, changing the type of defect from iron-related complexes to interstitial iron.