Fully implanted n-type PERT solar cells

Ion implantation is the technique of choice for introducing dopant species into semiconductors in CMOS devices. In photovoltaics ion implantation could be an interesting alternative to tube furnace diffusion processes. In this work we thus show that the damage introduced during implantation can be completely removed during annealing and that a co-annealing process can be applied for the annealing of boron and phosphorus profiles. Boron emitter implanted PassDop as well as fully implanted PERT solar cells have been fabricated. High conversion efficiencies could be achieved for both, the PassDop (22.2%, 694 mV) as well as for the fully implanted PERT (22.3%, 684 mV) solar cells, proving the high quality of the applied boron and phosphorus implantation.