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1990
Journal Article
Title
Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As
Abstract
Acceptor doping of MBE grown Ga0.47In0.53As on InP:Fe substrates utilizing manganese is investigated as an alternative for overcoming problems related to beryllium doping. The incorporation behaviour of manganese is analyzed in detail with respect to its application in optoelectronic device structures. Special emphasis is put on low-level and maximum-level doping relevant for use in buffer and contact layers, respectively. The dependence of activation energy and the degree of ionization on acceptor concentration is determined. At high doping levels the free-hole concentration is markedly lower than the doping concentration. It is attributed to the diffusion of acceptor species across the heterointerface in the substrate. Manganese diffusion is demonstrated to be an important effect for the interpretation of the measured results. Manganese doping is applied in p+/n/p--layer structures for junction field effect transistor applications. The intended abruptness of acceptor profiles is deteriorated by diffusion of manganese in the Ga0.47In0.53As material. The degraded device characteristics obtained are attributed to the acceptor diffusion behaviour established.
Keyword(s)
diffusion in solids
doping profiles
gallium arsenide
iii-v semiconductors
indium compounds
manganese
semiconductor doping
semiconductor epitaxial layers
semiconductor
acceptor doping
buffer layers
p+-n-p- layer structure
mbe grown
optoelectronic device structures
contact layers
activation energy
degree of ionization
free-hole concentration
heterointerface
diffusion
junction field effect transistor applications
degraded device characteristics
ga0.47in0.53as
GaInAs-InP