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2019
Poster
Title
Pre-deposition interfacial oxidation and post-deposition interface nitridation of LPCVD TEOS used as gate dielectric on 4H-SiC
Title Supplement
Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan
Author(s)
File(s)
Rights
Under Copyright
Language
English