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  4. Comparison of THz emitters and detectors pumped at 1560 nm: DAST, ErAs:InGaAs and LTG GaAs
 
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2012
Conference Paper
Title

Comparison of THz emitters and detectors pumped at 1560 nm: DAST, ErAs:InGaAs and LTG GaAs

Abstract
Several options for THz emitters and detectors operated at pump wavelengths around 1560 nm were investigated. Results from photoconductive antennas on In0.53Ga0.47As-based epilayers as well as DAST crystals are presented. Furthermore, the use of standard LTG GaAs antennas without frequency doubling is explored.
Author(s)
Ospald, F.
Zouaghi, W.
Rämer, J.-M.
Beigang, René
Mainwork
37th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2012  
Conference
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) 2012  
DOI
10.1109/IRMMW-THz.2012.6380150
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • antenna

  • crystal

  • detector

  • gallium arsenide

  • laser excitation

  • principal component analysis

  • pump laser

  • III-V semiconductor

  • terahertz wavedetector

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