Paper No P18: Study of interfacial treatment on the metal-oxide electron transport layer in the InP quantum dot light-emitting diodes

In this article, we describe the effect of ethanolamine (EA) surface treat-ment on the inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. The efficiency of the inverted QD-LEDs was significantly enhanced by EA treatment and optimization of the ZnO annealing temperature.