Dicing of thin Si wafers with a picosecond laser ablation process

In this paper an ablation cutting process of thin Si wafers with an ultra-short pulsed laser system (5 ps) is investigated in order to optimize specific process parameters. In contrast to state-of-the-art technologies like blade sawing and nanosecond-based laser processes, laser dicing with picosecond lasers offers fundamental advantages. Due to the short interaction time between laser and material, small kerf widths, marginal heat affected zones and minimal edge damaging are attainable. While a reduction of the kerf width leads to a higher yield per wafer, minimal thermal and mechanical damage increases the breaking strength of each die.