40 GHz High-Power Photodetector Module

We demonstrate a fully packaged photodetector module based on surface-illuminated modified uni-traveling-carrier (MUTC) photodiode (PD) and investigate its DC and RF characteristics. It has a very a low dark current below 2 nA at the operational reverse bias of 4 V and a responsivity of 0.49 A/W at 1550 nm. The module shows a high f3dB bandwidth of 38 GHz for low optical input powers and excellent linearity with RF output power levels of 11.7 dBm at 40 GHz. The power conversion efficiency ηPCE was 6.7% at 40 GHz making it suitable for RF signal generation.