Gettering efficiency of backside aluminium layer and Al-Si-Eutectic

Simulations of gettering processes are presented, modelling the gettering effect of Aluminium layers on silicon wafers. Focus is set on the influence of different physical parameters like segregation coefficient, Al layer thickness and structure, and impurity concentration on the Al getter mechanism. This work is the first step towards the optimization of the gettering process of wafers made of alternative feedstock material. The simulations of gettering processes are carried out applying the Sentaurus Process simulator (Synopsis®).