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  4. A standard method for measuring wafer bond strength for MEMS applications
 
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2008
Conference Paper
Title

A standard method for measuring wafer bond strength for MEMS applications

Abstract
A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, is underway. The precision and bias data, combined with experience in applying the test instructions included in MS5-1107, will provide the basis for an updated version of MS5. Measurements at the pilot lab have been completed, and the round robin is on-going at six additional laboratories.
Author(s)
Allen, R.A.
Marshall, J.
Baylies, W.
Read, D.
Delrio, F.
Turner, K.T.
Bernasch, M.
Bagdahn, J.
Mainwork
Semiconductor Wafer Bonding 10. Science, Technology, and Applications  
Conference
International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 2008  
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) 2008  
Electrochemical Society (Meeting) 2008  
Electrochemical Society of Japan (Fall Meeting) 2008  
DOI
10.1149/1.2982899
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Fraunhofer-Institut für Werkstoffmechanik IWM  
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