Metamorphic HEMT 0.5 mum low cost high performance process on 4'' GaAs substrates

Fabrication, performance and uniformity of 0.5 m gate length, passivated InAlAs/InGaAs metamorphic HEMTs (MHEMT) on 4 inch GaAs substrates are reported. Excellent uniformity of DC and HF characteristics across 4 inches wafers was achieved. An fT of 53 GHz and an fmax of 200 GHz was obtained for 0.5 m gate length devices. The standard deviation of the threshold voltage is 23 to 35 mV from wafer to wafer. These results demonstrate the potential of a low cost technology to fabricate MHEMTs on 4 inches GaAs substrates using i-line steppers to manufacture in production volumes.