Integration of D-Band 140 Ghz Iii-V Components Transceiver in Embedding Pcb-Based Technology

The use of III-V semiconductor devices significantly enhances RF performance in terms of output power compared to standard Si-based CMOS technology. However, integrating these components into optimized packages is a technological challenge due to their thin top-level gold contacts, which preclude the use of standard bumping techniques. This paper introduces the PCB embedding technology developed at Fraunhofer IZM, which facilitates the dense integration of III-V active components. A significant accomplishment of this work is the embedding of these ICs with different height by the innovative creation of a cavity. Additionally, the back-end design tackled the challenge of connecting thin gold pads without compromising the integrity of the air bridges. The study also addresses thermal aspects, focusing on heat dissipation and evaluating RF performance in the D-Band, highlighting the effectiveness of this technology for high-frequency applications.