Electron-beam-pumped nitride vertical-cavity surface- emitting structures with AlGaN/AlN DBR mirrors

Vertical cavity surface emitting structures designed for electron beam (EB) pumping have been grown by plasma assisted molecular beam epitaxy (PA-MBE). For the first time, AlGaN/AlN DBRs in conjunction with dielectric SiO2/HfO2 reflectors are utilized to embed GaN/AlGaN MQWs. PL spectra measured under weak photoexcitation reveal an enhancement of spontaneous emission reaching a Q factor of 425. One hybrid structure has been successfully pumped by pulsed EB and laser excitation showing an onset of stimulated emission.