The impacts of dimensions and return current path geometry on coupling in single ended through silicon vias

Through Silicon Vias (TSVs) are expected to play an increasingly important role in next-generation microelectronics packaging. Even when the challenge of attenuation is overcome, crosstalk remains a major concern in TSV design. In this paper, it is shown that, at frequencies above 20 GHz, near-end crosstalk can easily exceed -20 dB. Traditional analytical models for crosstalk are compared to full-wave simulations to determine their limitations and a lumped element equivalent circuit model is presented. An examination of the impact of TSV dimensions is presented. Then, three TSV structures are compared and the impact of their dimensions on crosstalk is investigated.