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  4. Numerical identification of geometric parameters from dynamic measurement of grinded membranes on wafer level
 
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2006
Conference Paper
Title

Numerical identification of geometric parameters from dynamic measurement of grinded membranes on wafer level

Abstract
In the paper a new, nondestructive quality testing methods for MEMS will be presented that can be applied on wafer level in early stage of the manufacturing process. The approach was applied to determine the thickness of KOH etched membranes from measured eigenfrequencies. The dynamic measurements of test specimen were performed by Laser Doppler Vibrometry. A Fineite Element (FE) model was created to identify the membrane thickness from the measured eigenfrequency values. A good agreement between the measured thicknesses and the calculated thicknesses of membranes was found. Furthermore, a stochastic model was created to describe the influence of different parameters on the calculated thickness of membrane.
Author(s)
Ebert, M.
Gerbach, R.
Bagdahn, J.
Michael, S.
Hering, S.
Mainwork
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, EuroSimE 2006  
Conference
International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE) 2006  
DOI
10.1109/ESIME.2006.1644016
Language
English
Fraunhofer-Institut für Werkstoffmechanik IWM  
Keyword(s)
  • MEMS

  • silicon

  • dynamic

  • natural frequency

  • system identification

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