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Raman scattering studies in phosphorus implanted and laser annealed boron doped Si
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1985
Journal Article
Title
Raman scattering studies in phosphorus implanted and laser annealed boron doped Si
Author(s)
Contreras, G.
Cardona, M.
Axmann, A.
Journal
Solid State Communications
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Keyword(s)
Laserannealing
Ramanstreuung
