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  4. Sub-nanosecond access time 2k sine-cosine ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology
 
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1997
Journal Article
Title

Sub-nanosecond access time 2k sine-cosine ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology

Other Title
2k Sinus-Cosinus-ROM mit Zugriffszeiten im Subnanosekundenbereich in AlGaAs/GaAs/AlGaAs quantum well HEMT Technologie
Abstract
The design and performance of a 2kbit sine-cosine ROM lookup table in 0.3mu m gate length AlGaAs/GaAs/AlGaAs HEMT technology are presented. A maximum clock frequency of 1.3GHZ is achieved resulting in a sub-nanosecond access time. The power consumption at supply voltages of +1.8 and -2V is about 2W.
Author(s)
Thiede, A.
Bushehri, E.
Nowotny, U.
Rieger-Motzer, M.
Sedler, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bronner, Wolfgang  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Hornung, J.
Kaufel, G.
Raynor, B.
Schneider, J.
Journal
Electronics Letters  
DOI
10.1049/el:19970278
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • digital signal synthesis

  • digitale Signalsynthese

  • Festwertspeicher

  • GaAs-Technologie

  • GaAs technology

  • HEMT

  • integrated circuit

  • integrierter Schaltkreis

  • read-only-memory

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