Fabrication aspects of InP-CAIBE processing for photonic crystal devices

An improved Ar/Cl CAIBE process for the fabrication of InP-based Photonic Crystals (PhCs) is presented. Effects of temperature, ion beam, chlorine flow and other parameters are discussed. In particular feature size effects are investigated on a length scale of 200 to 400 nm required for the realization of infrared photonic band gaps. The potential of CAIBE for fabrication of deep and uniform hole patterns in InP is demonstrated. The good quality of the samples including multi quantum well InGaAsP/InP layers was demonstrated by performing transmission measurements by internal light source technique.