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  4. Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration.
 
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1992
Conference Paper
Title

Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration.

Other Title
Performance-Vergleich von Hochgeschwindigkeits-GaAs/Al0.25Ga0.75As und In0.35Ga0.65As/GaAs Multiple-Quantum-Well-Lasern, die für monolithische Integration geeignet sind
Abstract
Vertically-compact high-speed GaAs/Alsub0.25Gasub0.75As and Insub0.35Gasub0.65As/GaAs multiple quantum well (MQW) lasers designed for monolithic integration with MODFET-based circuits are compared. 3 dB modulation bandwidths of 16 GHz and 21 GHz, respectively, are demonstrated.
Author(s)
Weisser, S.
Esquivias, I.
Gallagher, D.F.G.
Tasker, P.J.
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Larkins, E.C.
Ralston, J.D.
Rosenzweig, Josef  
Mainwork
ECOC '92. 18th European Conference on Optical Communication  
Conference
European Conference on Optical Communication (ECOC) 1992  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • differential gain

  • differentieller Gewinn

  • high-speed laser

  • Hochgeschwindigkeitslaser

  • modulation response

  • Modulationsantwort

  • monolithic integration

  • monolithische Integration

  • pseudomorphes InGaAs

  • pseudomorphic InGaAs

  • quantum wells

  • strained layer

  • verspannte Schicht

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